APTGT150SK170G
APTGT150SK170G
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1700 V
Collector-Emitter Saturation Voltage
2 V
Configuration
Single
Gate-Emitter Leakage Current
600 nA
Continuous Collector Current
250 A
Power Dissipation
890 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGT150SK170G: Модуль биполярного транзистора с изолированным затвором
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В наличии
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1700 V
Collector-Emitter Saturation Voltage
2 V
Configuration
Single
Gate-Emitter Leakage Current
600 nA
Continuous Collector Current
250 A
Power Dissipation
890 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGT150SK170G: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet