История:
LS1020ASN7KQB
SL23EP08SC-2T
SP-M12A-05P-FF-SH8002
APTML602U12R020T3AG
PB8DED1300BC0
PIC32MX130F128HT-50I/MR
STGWA50M65DF2
STGW20H60DF
2SA2154MFV-Y,L3F
LM139J/PB
NX1P2-1040DT1
SPP40SP3240DLG
TR2/1025TD3-R
220501.5MXP
DS5001FP-16N
D32B-TE-2g-M32
D48B-TE-2g-M32
MCF51JE256VLK
STV200K48D4X
SL23EP09ZI-1HT
APTGT300A60D3G
APTGT300A60D3G
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.5 V
Configuration
Dual
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
400 A
Power Dissipation
940 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGT300A60D3G: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.5 V
Configuration
Dual
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
400 A
Power Dissipation
940 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGT300A60D3G: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet

