APTGT300DU170G
APTGT300DU170G
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1700 V
Collector-Emitter Saturation Voltage
2 V
Configuration
Dual
Gate-Emitter Leakage Current
600 nA
Continuous Collector Current
400 A
Power Dissipation
1.66 kW
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGT300DU170G: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1700 V
Collector-Emitter Saturation Voltage
2 V
Configuration
Dual
Gate-Emitter Leakage Current
600 nA
Continuous Collector Current
400 A
Power Dissipation
1.66 kW
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGT300DU170G: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet