История:
APTMC120HRM40CT3AG
APTGT300SK60D3G
APTGT300SK60D3G
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.5 V
Configuration
Single
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
400 A
Power Dissipation
940 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGT300SK60D3G: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.5 V
Configuration
Single
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
400 A
Power Dissipation
940 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGT300SK60D3G: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet

