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APTGT400A120D3G
APTGT400A120D3G
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.7 V
Configuration
Dual
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
580 A
Power Dissipation
2.1 kW
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGT400A120D3G: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.7 V
Configuration
Dual
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
580 A
Power Dissipation
2.1 kW
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGT400A120D3G: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet