История: 
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			APTGT400A120D3G
        APTGT400A120D3G
        
            
                
                    
                    
                        
                        
                    
                
                
                                                                                                                                                                                                                                                                                                                                                                                                                                                
                                                
                    
                                            
            
            
                
                    
                    
                        
                        
                        
                    
                
            
            
                                                                                                                                                                                                                                                                                                                                                                                                                                            
                                                    
                
                                    
        
    
Характеристики
                    
                            Manufacturer
                            
                            Microchip
                        
                                                
                            Product
                            
                            IGBT Silicon Modules
                        
                                                
                            Collector- Emitter Voltage VCEO Max
                            
                            1200 V
                        
                                                
                            Collector-Emitter Saturation Voltage
                            
                            1.7 V
                        
                                                
                            Configuration
                            
                            Dual
                        
                                                
                            Gate-Emitter Leakage Current
                            
                            400 nA
                        
                                                
                            Continuous Collector Current
                            
                            580 A
                        
                                                
                            Power Dissipation
                            
                            2.1 kW
                        
                                            Описание
                        Module insulated-gate bipolar transistor, IGBT-Module APTGT400A120D3G: Модуль биполярного транзистора с изолированным затвором
                    
                                        
                        Скачать datasheet
                        
                    
                    
                Характеристики
                    
                                Manufacturer
                                
                                Microchip
                            
                                                    
                                Product
                                
                                IGBT Silicon Modules
                            
                                                    
                                Collector- Emitter Voltage VCEO Max
                                
                                1200 V
                            
                                                    
                                Collector-Emitter Saturation Voltage
                                
                                1.7 V
                            
                                                    
                                Configuration
                                
                                Dual
                            
                                                    
                                Gate-Emitter Leakage Current
                                
                                400 nA
                            
                                                    
                                Continuous Collector Current
                                
                                580 A
                            
                                                    
                                Power Dissipation
                                
                                2.1 kW
                            
                                            Описание
                    Module insulated-gate bipolar transistor, IGBT-Module APTGT400A120D3G: Модуль биполярного транзистора с изолированным затвором
                
                                    
                        Скачать datasheet
                        
                    
                
            
