История:
EC70/34/17-3C94-G200
TLV4021R1YKAR
BK/1A1119-09-R
E42/33/20-3C95-G500
ER23/3.6/13-3C97-S
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D16B-SF-2L-M25
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TMS32C6202BGNZA250
E20/10/6-3C94-G100
QK010N5RP
094292
E42/21/15-3F36
ER14.5/3/7-3C96-A160-S
PM-M12A-03P-FF-SR8A01
83905AGILFT
AC0603FR-07221RL
APTGT100DA60T1G
APTGT400A60D3G
APTGT400A60D3G
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.5 V
Configuration
Dual
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
500 A
Power Dissipation
1.25 kW
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGT400A60D3G: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.5 V
Configuration
Dual
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
500 A
Power Dissipation
1.25 kW
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGT400A60D3G: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet

