История:
MAA150-1S28SDP
APTGT150H60TG
T920N02TOF
APTGT400A60D3G
APTGT400A60D3G
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.5 V
Configuration
Dual
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
500 A
Power Dissipation
1.25 kW
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGT400A60D3G: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.5 V
Configuration
Dual
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
500 A
Power Dissipation
1.25 kW
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGT400A60D3G: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet

