История:
LM211MDREP
X1180-01-XT202-2A
APTGT400DA60D3G
APTGT400DA60D3G
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.5 V
Configuration
Single
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
500 A
Power Dissipation
1.25 kW
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGT400DA60D3G: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
В наличии
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.5 V
Configuration
Single
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
500 A
Power Dissipation
1.25 kW
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGT400DA60D3G: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet

