История:
E14/3.5/5/R-3F36-A63-P
D48B-SE-2g-M40
LRU226R
APTGT400SK120G
APTGT400SK120G
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.7 V
Configuration
Single
Gate-Emitter Leakage Current
800 nA
Continuous Collector Current
560 A
Power Dissipation
1.785 kW
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGT400SK120G: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.7 V
Configuration
Single
Gate-Emitter Leakage Current
800 nA
Continuous Collector Current
560 A
Power Dissipation
1.785 kW
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGT400SK120G: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet

