APTGT400TL65G
APTGT400TL65G
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
650 V
Collector-Emitter Saturation Voltage
1.5 V
Gate-Emitter Leakage Current
1.2 uA
Continuous Collector Current
500 A
Power Dissipation
1.15 kW
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGT400TL65G: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
650 V
Collector-Emitter Saturation Voltage
1.5 V
Gate-Emitter Leakage Current
1.2 uA
Continuous Collector Current
500 A
Power Dissipation
1.15 kW
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGT400TL65G: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet