История:
EP17-3F46-A100
APTGT400U120D4G
APTGT400U120D4G
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.7 V
Configuration
Single
Gate-Emitter Leakage Current
600 nA
Continuous Collector Current
650 A
Power Dissipation
1.785 kW
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGT400U120D4G: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.7 V
Configuration
Single
Gate-Emitter Leakage Current
600 nA
Continuous Collector Current
650 A
Power Dissipation
1.785 kW
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGT400U120D4G: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet

