История:
T2050H-6G-TR
PBSS303PZ,135
094194
PBSS4130PAN,115
FZ800R12KE3
PTGL07AR560M9B51A0
EP4SGX180HF35C3G
FZ600R65KE3
GG8068203255104S R3KT
SRA64A030N
SL1411A075SM
FZ400R12KE4
FZ500R65KE3
2SA1593S-E
T1650-600G-TR
2SA1774T1G
TD175N16SOF
IXGK55N120A3H1
TD120N16SOF
094216
160111-6006
DTA143ZUBHZGTL
APTGT200SK120G
QUS239-GREEN
T1635-700G-TR
APTGT150SK60T1G
MG1240H-XBN2MM
APTGT400U120D4G
APTGT400U120D4G
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.7 V
Configuration
Single
Gate-Emitter Leakage Current
600 nA
Continuous Collector Current
650 A
Power Dissipation
1.785 kW
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGT400U120D4G: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.7 V
Configuration
Single
Gate-Emitter Leakage Current
600 nA
Continuous Collector Current
650 A
Power Dissipation
1.785 kW
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGT400U120D4G: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet

