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APTGT400U170D4G
APTGT400U170D4G
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1700 V
Collector-Emitter Saturation Voltage
2 V
Configuration
Single
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
800 A
Power Dissipation
2.08 kW
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGT400U170D4G: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1700 V
Collector-Emitter Saturation Voltage
2 V
Configuration
Single
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
800 A
Power Dissipation
2.08 kW
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGT400U170D4G: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet

