APTGT450SK60G
APTGT450SK60G
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.4 V
Configuration
Single
Gate-Emitter Leakage Current
600 nA
Continuous Collector Current
550 A
Power Dissipation
1.75 kW
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGT450SK60G: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.4 V
Configuration
Single
Gate-Emitter Leakage Current
600 nA
Continuous Collector Current
550 A
Power Dissipation
1.75 kW
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGT450SK60G: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet