APTGT50DA120TG
APTGT50DA120TG
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.7 V
Configuration
Single
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
75 A
Power Dissipation
277 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGT50DA120TG: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.7 V
Configuration
Single
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
75 A
Power Dissipation
277 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGT50DA120TG: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet