APTGT50TDU60PG
APTGT50TDU60PG
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.5 V
Configuration
Triple Dual Common Source
Gate-Emitter Leakage Current
600 nA
Continuous Collector Current
80 A
Power Dissipation
176 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGT50TDU60PG: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.5 V
Configuration
Triple Dual Common Source
Gate-Emitter Leakage Current
600 nA
Continuous Collector Current
80 A
Power Dissipation
176 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGT50TDU60PG: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet