APTGT600A60G
APTGT600A60G
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.4 V
Configuration
Dual
Gate-Emitter Leakage Current
800 nA
Continuous Collector Current
700 A
Power Dissipation
2.3 kW
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGT600A60G: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.4 V
Configuration
Dual
Gate-Emitter Leakage Current
800 nA
Continuous Collector Current
700 A
Power Dissipation
2.3 kW
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGT600A60G: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet