APTGT600U120D4G
APTGT600U120D4G
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.7 V
Configuration
Single
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
900 A
Power Dissipation
2.5 kW
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGT600U120D4G: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.7 V
Configuration
Single
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
900 A
Power Dissipation
2.5 kW
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGT600U120D4G: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet