APTGT600U170D4G
APTGT600U170D4G
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1700 V
Collector-Emitter Saturation Voltage
2 V
Configuration
Single
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
1100 A
Power Dissipation
2.9 kW
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGT600U170D4G: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1700 V
Collector-Emitter Saturation Voltage
2 V
Configuration
Single
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
1100 A
Power Dissipation
2.9 kW
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGT600U170D4G: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet