APTGT750U60D4G
APTGT750U60D4G
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.5 V
Configuration
Single
Gate-Emitter Leakage Current
3.1 uA
Continuous Collector Current
1000 A
Power Dissipation
2.3 kW
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGT750U60D4G: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.5 V
Configuration
Single
Gate-Emitter Leakage Current
3.1 uA
Continuous Collector Current
1000 A
Power Dissipation
2.3 kW
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGT750U60D4G: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet