История:
01M1502SPB4
P0300SCLRP
1.5SMC540A
015401.6DR
015701.5DRT
APTGT75DA120TG
APTGT75DA120TG
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.7 V
Configuration
Single
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
110 A
Power Dissipation
357 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGT75DA120TG: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.7 V
Configuration
Single
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
110 A
Power Dissipation
357 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGT75DA120TG: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet

