APTGT75DU120TG
APTGT75DU120TG
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.7 V
Configuration
Dual
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
100 A
Power Dissipation
350 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGT75DU120TG: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.7 V
Configuration
Dual
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
100 A
Power Dissipation
350 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGT75DU120TG: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet