История:
B652-2AX2
CD8067304126100S REZ9
015406.3DRL
TR2-S505H-V-4-R
PM-M12A-03P-MM-SL8B01
210968
P18/11-3C90-A315
IGP40N65H5
YPCL0150N
LRU2642R
TR2-S505H-V-1-R
095512
DTA123EEFRATL
E32/6/20/R-3C97
P14/8-3D3
125059
MCC720-18io7
MCC720-14io7
FGH40T65UQDF-F155
B59701A0070A062
9DB633AFLF
S32B-SM-2L.M-2PG29
APTGT75TL60T3G
APTGT75TL60T3G
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.5 V
Gate-Emitter Leakage Current
600 nA
Continuous Collector Current
100 A
Power Dissipation
250 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGT75TL60T3G: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.5 V
Gate-Emitter Leakage Current
600 nA
Continuous Collector Current
100 A
Power Dissipation
250 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGT75TL60T3G: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet

