APTGT75TL60T3G
APTGT75TL60T3G
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.5 V
Gate-Emitter Leakage Current
600 nA
Continuous Collector Current
100 A
Power Dissipation
250 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGT75TL60T3G: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.5 V
Gate-Emitter Leakage Current
600 nA
Continuous Collector Current
100 A
Power Dissipation
250 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTGT75TL60T3G: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet

