APTLGL325A1208G
APTLGL325A1208G
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.85 V
Configuration
Dual
Continuous Collector Current
420 A
Power Dissipation
1.5 kW
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTLGL325A1208G: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.85 V
Configuration
Dual
Continuous Collector Current
420 A
Power Dissipation
1.5 kW
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTLGL325A1208G: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet

