APTLGT300A1208G
APTLGT300A1208G
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.7 V
Configuration
Dual
Continuous Collector Current
440 A
Power Dissipation
1.4 kW
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTLGT300A1208G: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.7 V
Configuration
Dual
Continuous Collector Current
440 A
Power Dissipation
1.4 kW
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTLGT300A1208G: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet

