APTLGT400A608G
APTLGT400A608G
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.5 V
Configuration
Dual
Continuous Collector Current
600 A
Power Dissipation
1.25 kW
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTLGT400A608G: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Microchip
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.5 V
Configuration
Dual
Continuous Collector Current
600 A
Power Dissipation
1.25 kW
Описание
Module insulated-gate bipolar transistor, IGBT-Module APTLGT400A608G: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet

