BSM150GB120DN2
BSM150GB120DN2
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
2.5 V
Configuration
Half Bridge
Gate-Emitter Leakage Current
320 nA
Continuous Collector Current
210 A
Power Dissipation
1.25 kW
Описание
Module insulated-gate bipolar transistor, IGBT-Module BSM150GB120DN2: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
2.5 V
Configuration
Half Bridge
Gate-Emitter Leakage Current
320 nA
Continuous Collector Current
210 A
Power Dissipation
1.25 kW
Описание
Module insulated-gate bipolar transistor, IGBT-Module BSM150GB120DN2: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet