BSM15GD120DLCE3224
BSM15GD120DLCE3224
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
2.1 V
Configuration
Hex
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
35 A
Power Dissipation
145 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module BSM15GD120DLCE3224: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
2.1 V
Configuration
Hex
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
35 A
Power Dissipation
145 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module BSM15GD120DLCE3224: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet