BSM15GP60
BSM15GP60
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.95 V
Configuration
Array 7
Gate-Emitter Leakage Current
300 nA
Continuous Collector Current
20 A
Power Dissipation
100 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module BSM15GP60: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.95 V
Configuration
Array 7
Gate-Emitter Leakage Current
300 nA
Continuous Collector Current
20 A
Power Dissipation
100 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module BSM15GP60: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet

