BSM20GP60
BSM20GP60
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.95 V
Configuration
Hex
Gate-Emitter Leakage Current
300 nA
Continuous Collector Current
35 A
Power Dissipation
130 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module BSM20GP60: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.95 V
Configuration
Hex
Gate-Emitter Leakage Current
300 nA
Continuous Collector Current
35 A
Power Dissipation
130 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module BSM20GP60: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet