BSM300GA120DLC
BSM300GA120DLC
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
2.6 V
Configuration
Single Dual Emitter
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
570 A
Power Dissipation
2250 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module BSM300GA120DLC: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
2.6 V
Configuration
Single Dual Emitter
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
570 A
Power Dissipation
2250 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module BSM300GA120DLC: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet