BSM35GB120DN2
BSM35GB120DN2
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
3.2 V
Configuration
Half Bridge
Gate-Emitter Leakage Current
150 nA
Continuous Collector Current
50 A
Power Dissipation
280 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module BSM35GB120DN2: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
3.2 V
Configuration
Half Bridge
Gate-Emitter Leakage Current
150 nA
Continuous Collector Current
50 A
Power Dissipation
280 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module BSM35GB120DN2: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet