BSM50GD60DLC
BSM50GD60DLC
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
2.2 V
Configuration
Hex
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
70 A
Power Dissipation
250 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module BSM50GD60DLC: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
2.2 V
Configuration
Hex
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
70 A
Power Dissipation
250 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module BSM50GD60DLC: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet