F3L11MR12W2M1B65BOMA1
F3L11MR12W2M1B65BOMA1
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Carbide Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.75 V
Configuration
Dual
Gate-Emitter Leakage Current
100 nA
Continuous Collector Current
50 A
Power Dissipation
20 mW
Описание
Module insulated-gate bipolar transistor, IGBT-Module F3L11MR12W2M1B65BOMA1: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Carbide Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.75 V
Configuration
Dual
Gate-Emitter Leakage Current
100 nA
Continuous Collector Current
50 A
Power Dissipation
20 mW
Описание
Module insulated-gate bipolar transistor, IGBT-Module F3L11MR12W2M1B65BOMA1: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet