История:
121KH20J-OP7.5
QJ6016LH6TP
121KH20J-OP7.5TR
FS15R12YT3
FS10R06VE3
QJ4025KH6TP
F3L400R10W3S7B11BPSA1
FAM65V05DF1
DF80R07W1H5FPB11BPSA1
QJ4025LH6TP
FS150R17PE4
FAM65HR51DS2
0154007.DRTL
FS10R12YE3
DF900R12IP4D
121KH20J-OP7.5TB
0154004.DRT
015401.5DRTL
XCR3256XL-7FTG256C
121KH20J-P7.5
121KH20J-P7.5TR
121KH20J-OTB
0154002.DRT
XCR3384XL-12FTG256C
0154004.DRTL
121KH20J-P7.5TB
LC4064ZE-5MN64C
0154003.DRT
0154005.DR
0154002.DRTL
121KH20J-O
8.0SMDJ22A
R1331NC10B
MA15KP150A
FD1200R17KE3-K
FD1200R17KE3-K
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1700 V
Configuration
Single Dual Collector Dual Emitter
Continuous Collector Current
1600 A
Описание
Module insulated-gate bipolar transistor, IGBT-Module FD1200R17KE3-K: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1700 V
Configuration
Single Dual Collector Dual Emitter
Continuous Collector Current
1600 A
Описание
Module insulated-gate bipolar transistor, IGBT-Module FD1200R17KE3-K: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet