FF150R17KE4
FF150R17KE4
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1700 V
Collector-Emitter Saturation Voltage
2.45 V
Configuration
Dual
Gate-Emitter Leakage Current
100 nA
Continuous Collector Current
250 A
Power Dissipation
1100 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module FF150R17KE4: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1700 V
Collector-Emitter Saturation Voltage
2.45 V
Configuration
Dual
Gate-Emitter Leakage Current
100 nA
Continuous Collector Current
250 A
Power Dissipation
1100 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module FF150R17KE4: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet