FF200R12KS4
FF200R12KS4
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
3.2 V
Configuration
Dual
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
275 A
Power Dissipation
1.4 kW
Описание
Module insulated-gate bipolar transistor, IGBT-Module FF200R12KS4: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
3.2 V
Configuration
Dual
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
275 A
Power Dissipation
1.4 kW
Описание
Module insulated-gate bipolar transistor, IGBT-Module FF200R12KS4: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet