FF225R12ME4PBPSA1
FF225R12ME4PBPSA1
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.85 V
Configuration
Half Bridge
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
450 A
Power Dissipation
20 mW
Описание
Module insulated-gate bipolar transistor, IGBT-Module FF225R12ME4PBPSA1: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.85 V
Configuration
Half Bridge
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
450 A
Power Dissipation
20 mW
Описание
Module insulated-gate bipolar transistor, IGBT-Module FF225R12ME4PBPSA1: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet