FF300R12KT4
FF300R12KT4
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
2.1 V
Configuration
Dual
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
450 A
Power Dissipation
1600 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module FF300R12KT4: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
2.1 V
Configuration
Dual
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
450 A
Power Dissipation
1600 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module FF300R12KT4: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet