FF400R07A01E3S6XKSA2
FF400R07A01E3S6XKSA2
Характеристики
Manufacturer
Infineon
Collector- Emitter Voltage VCEO Max
700 V
Collector-Emitter Saturation Voltage
1.65 V
Configuration
Dual
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
400 A
Power Dissipation
1500 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module FF400R07A01E3S6XKSA2: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Infineon
Collector- Emitter Voltage VCEO Max
700 V
Collector-Emitter Saturation Voltage
1.65 V
Configuration
Dual
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
400 A
Power Dissipation
1500 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module FF400R07A01E3S6XKSA2: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet

