FF400R12KT3
FF400R12KT3
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
2.15 V
Configuration
Dual
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
580 A
Power Dissipation
2 kW
Описание
Module insulated-gate bipolar transistor, IGBT-Module FF400R12KT3: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
2.15 V
Configuration
Dual
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
580 A
Power Dissipation
2 kW
Описание
Module insulated-gate bipolar transistor, IGBT-Module FF400R12KT3: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet