FF450R12ME4EB11BPSA1
FF450R12ME4EB11BPSA1
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.75 V
Configuration
Common Emitter
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
450 A
Power Dissipation
20 mW
Описание
Module insulated-gate bipolar transistor, IGBT-Module FF450R12ME4EB11BPSA1: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.75 V
Configuration
Common Emitter
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
450 A
Power Dissipation
20 mW
Описание
Module insulated-gate bipolar transistor, IGBT-Module FF450R12ME4EB11BPSA1: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet