FP10R12KE3
FP10R12KE3
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
2.45 V
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
15 A
Power Dissipation
20 mW
Описание
Module insulated-gate bipolar transistor, IGBT-Module FP10R12KE3: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
2.45 V
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
15 A
Power Dissipation
20 mW
Описание
Module insulated-gate bipolar transistor, IGBT-Module FP10R12KE3: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet