FP20R06KL4
FP20R06KL4
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.95 V
Configuration
Hex
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
25 A
Power Dissipation
78 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module FP20R06KL4: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.95 V
Configuration
Hex
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
25 A
Power Dissipation
78 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module FP20R06KL4: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet