FP25R12W2T4_B11
FP25R12W2T4_B11
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
2.25 V
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
39 A
Power Dissipation
175 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module FP25R12W2T4_B11: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
2.25 V
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
39 A
Power Dissipation
175 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module FP25R12W2T4_B11: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet