FP50R12KT4PBPSA1
FP50R12KT4PBPSA1
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.85 V
Configuration
3-Phase
Gate-Emitter Leakage Current
100 nA
Continuous Collector Current
50 A
Описание
Module insulated-gate bipolar transistor, IGBT-Module FP50R12KT4PBPSA1: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.85 V
Configuration
3-Phase
Gate-Emitter Leakage Current
100 nA
Continuous Collector Current
50 A
Описание
Module insulated-gate bipolar transistor, IGBT-Module FP50R12KT4PBPSA1: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet