FP75R12KT3
FP75R12KT3
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
2.15 V
Configuration
Hex
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
105 A
Power Dissipation
355 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module FP75R12KT3: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
2.15 V
Configuration
Hex
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
105 A
Power Dissipation
355 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module FP75R12KT3: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet