FP75R12KT4_B15
FP75R12KT4_B15
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
2.15 V
Gate-Emitter Leakage Current
100 nA
Continuous Collector Current
75 A
Power Dissipation
385 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module FP75R12KT4_B15: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
2.15 V
Gate-Emitter Leakage Current
100 nA
Continuous Collector Current
75 A
Power Dissipation
385 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module FP75R12KT4_B15: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet