FPF2G120BF07ASP
FPF2G120BF07ASP
Характеристики
Manufacturer
ON Semiconductor
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
650 V
Collector-Emitter Saturation Voltage
1.55 V
Configuration
Triple
Gate-Emitter Leakage Current
2 uA
Continuous Collector Current
40 A
Power Dissipation
156 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module FPF2G120BF07ASP: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
ON Semiconductor
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
650 V
Collector-Emitter Saturation Voltage
1.55 V
Configuration
Triple
Gate-Emitter Leakage Current
2 uA
Continuous Collector Current
40 A
Power Dissipation
156 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module FPF2G120BF07ASP: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet