История:
8.0SMDJ20CA
FS100R12PT4
FS100R12PT4
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
2.15 V
Gate-Emitter Leakage Current
100 nA
Continuous Collector Current
135 A
Power Dissipation
500 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module FS100R12PT4: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
2.15 V
Gate-Emitter Leakage Current
100 nA
Continuous Collector Current
135 A
Power Dissipation
500 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module FS100R12PT4: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet

