История:
TMS320DM6435ZWT7
TMS320DM6437ZWT4
FS10R06VE3
FS200R07PE4
FS200R07PE4
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
650 V
Collector-Emitter Saturation Voltage
1.95 V
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
200 A
Power Dissipation
600 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module FS200R07PE4: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
650 V
Collector-Emitter Saturation Voltage
1.95 V
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
200 A
Power Dissipation
600 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module FS200R07PE4: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet

