FS20R06VE3
FS20R06VE3
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.55 V
Configuration
IGBT-Inverter
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
25 A
Power Dissipation
71.5 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module FS20R06VE3: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.55 V
Configuration
IGBT-Inverter
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
25 A
Power Dissipation
71.5 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module FS20R06VE3: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet